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 60 -10V 50 40 -4.5V -3.5V -4V
60 50 40 Vds=-5V
-Id (A)
30 20 10 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics Vgs=-3V
-Id(A)
30 20 125C 10 25C 0 1 1.5 2 2.5 3 3.5 4 -Vgs(Volts) Figure 2: Transfer Characteristics 1.6
10
Rds(on) (m:)
8
Vgs=-4.5V
Normalized On-Resistance
Id=-15A 1.4 Vgs=-10V
6 Vgs=-10V 4
1.2 Vgs=-4.5V 1
2 0 5 10 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
20 Id=-15A 16
1.0E+01 1.0E+00 1.0E-01 125C Vgs=0V
Rds(on) (m:)
12 8 25C 4 0 2 4 6
-Is (A)
125C
1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4
25C
0.6
0.8
1.0
8
10
-Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
-Vsd (Volts) Figure 6: Body-Diode Characteristics
10 Vds=-15V Id=-15A 8
8000 7000 Ciss
Capacitance (pF)
6000 5000 4000 3000 2000 1000 Crss Coss
-Vgs (Volts)
6
4
2
0 0 20 40 60 80 100 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Rds(on) limited 10.0 10Ps 100Ps 1ms
0 0 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30
100 80 Tj(max)=150C Ta=25C
-Id (Amps)
Power (W)
10ms 0.1s 1s Tj(max)=150C Ta=25C 10s DC
60 40 20 0 0.001
1.0
0.1 0.1 1 10 100 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10
0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000
0.01 0.00001
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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